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           PMEG2010EPA_1 ? NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 15 December 2009 9 of 13 NXP Semiconductors PMEG2010EPA 1 A low VF MEGA Schottky barrier rectifier 8. Test information The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are calculated according to the equations: with IIFAV()= IM ×δ M defined as peak current, FAV() at DC, and with I IRMS = IM ×δ RMS defined as RMS current. 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline Fig 13. Duty cycle definition = t1 t2 P t 006aaa812 duty cycle δ t1 t2 IRMS = I Fig 14. Package outline SOT1061 09-11-12 Dimensions in mm 0.65 max 2.1 1.9 1.6 1.4 0.35 0.25 0.45 0.35 2.1 1.9 1.1 0.9 0.3 0.2 1.05 0.95 1.3 2 3 1 |